国家/地区 法国（10）
IPC部 H（10） C（7） B（6）
IPC大类 H01（10） B82（6） C01（6）
C23（4） B01（3） B05（2）
B22（2） C25（2） C30（2）
IPC小类 H01L（10） B82Y（6） C01B（6）
C23C（4） B01J（3） B05D（2）
B22F（2） C25D（2） C30B（2）
H01M（2）
IPC H01L021/02（10）
发明人 ZENASNI A（3） GABEN F（2）
公开年 2013（2） 2021（2）
申请年 2011（3）  2020（2） 
专利权人 COMMISSARIAT.（5） CENT NAT REC.（2） CNRS CENT NA.（2）

Negative-capacitance FET for use in microelectronic field, has channel arranged in active layer, and gate arranged on the channel and insulated from channel by gate dielectric.

RADU I, BESNARD G, CRISTOLOVEANU S

Manufacture of lithium-ion battery used for e.g. phone and laptop, involves e.g. depositing dense layer comprising anode, cathode and/or electrolyte, by supplying substrate and suspension of non-agglomerated nanoparticles of material having preset size, and performing densification of dried layer.

GABEN F

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Producing graphene film used in e.g. biological sensors involves forming graphene film by epitaxial deposition in contact with platinum-containing monocrystalline zone of substrate catalyst layer using chemical vapor deposition device.

GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G

Method for realization of hybrid graphene/semiconductor material for e.g. photovoltaic applications, involves depositing set of nanofils or two-dimensional layer of semiconductor material by electrodeposition on graphene.

ZENASNI A, IVANOVAHRISTOVA V

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Electronic component, has graphene films interposed between superposed conductive or semiconductor electrodes, so that electrodes are electronically and/or magnetically coupled through thickness of each of graphene films.

SENEOR P, DLUBAK B, BARRAUD C, TATAY A S, TATAYAGUILAR S, AJWIRAREU S T

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J